INVITED SPEAKERS
NAVID ASADI
University of Florida, USA
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Physical Assurance for Advanced Packaging
Dr. Navid Asadi holds the position of Associate Professor within the Electrical and Computer Engineering Department and is affiliated with the Materials Science and Engineering department at the University of Florida. His research delves into innovative methods for advanced inspection of integrated circuits (ICs), detecting and preventing counterfeits, system and chip-level decomposition, security assessment, anti-reverse engineering techniques, 3D imaging, invasive and semi-invasive physical assurance, and supply chain security. Dr. Asadi has garnered recognition, including the NSF CAREER award and multiple best paper awards from prestigious conferences such as the IEEE International Symposium on Hardware Oriented Security and Trust (HOST) and the ASME International Symposium on Flexible Automation (ISFA). He was honored with the D.E. Crow Innovation award from the University of Connecticut. Additionally, he founded and currently serves as the general chair of the IEEE Physical Assurance and Inspection of Electronics (PAINE) Conference. Heading the security and assurance (SCAN) lab, Dr. Asadi oversees facilities valued at over $10 million, specializing in advanced imaging, characterization, and reliability. He has authored over 100 peer-reviewed journal and conference papers and holds 18 patents in the field of advanced inspection and assurance.
MIRKO BERNARDONI
Infineon Technologies Austria, Automotive Product Development, Principal Engineer for Power Management and Methodologies
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Virtual prototyping in power electronics: the role of simulation in developing reliable products
Mirko Bernardoni was born in Mantova, Italy, in 1984. He obtained his BSc and MSc (cum Laude) in Electronic Engineering from the University of Parma, Italy, in 2006 and 2008, respectively. He obtained his PhD in Information Technology, in 2012, working on aspects of electro-thermal modelling for high-power and high-frequency semiconductor devices, including a cooperation with the Center for Device Thermography and Reliability, University of Bristol, UK as a visiting PhD student and subsequently as a postdoctoral research.
Between 2013 and 2018 he worked as Modelling and Simulation Engineer at the Kompetenzzentrum für Automobil- und Industrieelektronik (KAI), Villach, a subsidiary of Infineon Technologies Austria, with main focus on electro-thermal modelling, reliability assessment and characterization of low-voltage Si-MOSFETs for automotive applications.
Between 2018 and 2021 he worked at Infineon Technologies Austria as Concept Engineer for Power Electronics for automotive applications, working in the product development of automotive power distribution products.
Between 2021 and 2022 he worked as Principal Engineer Power Electronics at Huawei Nuremberg Research Center, Germany, focusing on virtual prototyping methodologies for power conversion applications, including thermal management and electrical parasitic extraction in advanced packaging for high frequency and high power applications.
Since 2023 he is a Principal Engineer for Power Management and Methodologies in Infineon Technologies Austria, Villach, focusing on virtual prototyping and design methodologies for product development of advanced power distribution products for the automotive market.
SIMONE GERARDIN
University of Padova, Italy
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Non-volatile Memories for the Space Environment: Ionizing Radiation Effects
Simone Gerardin received the Laurea degree (cum laude) in Electronics Engineering in 2003, and a Ph.D. in Electronics and Telecommunications Engineering in 2007, both from the University of Padova – Italy, where he is now an Associate Professor of Electronics. In 2020 he obtained the habilitation to full professorship.
His research has been focused on soft and hard errors induced by ionizing radiation in advanced electronic technologies, and on their interplay with device aging and electrostatic discharges. During his research career, he worked on several technologies and devices, ranging from deep-submicron MOSFETs, FinFETs, tunnel FETs and GaN HEMTs to microprocessors and Field Programmable Gate Arrays (FPGA). In recent years, he has been focusing on Non-Volatile Memories (NVM, including floating gate cells with 3D architecture, charge trap, resistive, and phase-change technologies) and ultra-high dose effects in MOSFETs for high-energy physics experiments.
He took part in several Italian and European projects and collaborated with space agencies (ESA-ESTEC, NASA-JPL, and ASI), research institutions (CERN, RAL, IMEC, INFN), universities, and semiconductor and space companies (STMicroelectronics, Numonyx, Micron, Actel, Thales Alenia Space), both in Europe and in the USA.
He has authored or co-authored more than one hundred papers published in international peer-reviewed journals and more than 100 conference presentations, of which more than ten won awards at the RADiation and its Effects on Components and Systems (RADECS) and the Nuclear Space Radiation Effects Conference (NSREC). He also wrote three book chapters and coedited a book in 2016 about radiation effects in electronics.
He presented seminars and invited talks about his research activities to universities, research institutions, and companies in the USA, China, Australia, Brazil, and across Europe. He has been session chair at RADECS, at NSREC, and at the European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF). He co-organized a thematic workshop on NVMs at RADECS 2010. He has been a short course instructor at RADECS 2009, NSREC 2010, RADECS 2015, illustrating basic mechanisms of radiation effects, non-volatile memories for space, and new effects in advanced components, respectively. He has been the short course chair for NSREC 2018, the technical program chair for NSREC 2019, and the general chair for RADECS 2022. From to 2014 to 2017 he has been member-at-large of the IEEE NPSS radiation effects steering group and from 2017 he has been a member of the RADECS steering group. From 2010 to 2018 he has been an associate editor for the IEEE Transactions on Nuclear Science, and he has been a guest editor for Semiconductor Science Technology in 2015.
ANDREA IRACE
Department of Electrical Engineering and Information Technologies
Università di Napoli "Federico II", Italy
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Out-of-SOA Electrothermal Limitations of Power Semiconductor Devices: Characterization and Modeling
Andrea Irace (Senior Member, IEEE) received the master’s degree in electronic engineering and the Ph.D. degree in electronics and computer science from the University of Naples Federico II, Naples, Italy, in 1994. In 1998, he was a Visiting Scientist at the Delft Institute of Microelectronics and Submicron Technology, Delft, The Netherlands. He is currently a Full Professor of Electronics with the University of Naples Federico II. He has authored more than 200 articles published in peer-reviewed international journals and conferences. His research interests focus on the design of electronic devices for renewable energy sources and electric mobility, the development of sensors for biomedical applications, and the Internet of Things (IoT). Prof. Irace is a member of the Technical Program Committee of ICSCRM and ESREF and he has acted as General Chairperson for the 2023 edition of the International Conference on Silicon Carbide and related materials.
GRIGORY ONUSHKIN
Signify Research, Eindhoven, The Netherlands
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LED Reliability for Lighting Applications and Beyond
Grigory Onushkin is a LED Expert and Scientist in Solid State Light Sources at Signify Research, based in Eindhoven, The Netherlands. His expertise centers around the exploration, pre-development and design of LED-based illumination systems, with a particular focus on the solid-state light generation for various lighting applications. Grigory’s work includes advanced analysis, performance modelling and roadmapping of LED technologies, as well as the meticulous design, measurement, and failure analysis of LED chips and packages. He has a strong and diverse experience in various analytical methods for wide-bang-gap semiconductors material research, design and analysis of high-power LEDs and packages. Notably, Grigory has been instrumental in designing and developing integrated Alternating Current operated LEDs (ACOLED or ACLED). His comprehensive skillset and innovative approach make him a leading figure in the field of LED technology and solid-state lighting research.
Prior to joining Philips Lighting (currently Signify), Grigory worked as Senior Engineer with key focus on design, development and analysis of LEDs and LED materials in Corporal R&D at Samsung.
Grigory’s academic foundation was solidified at Saint Petersburg State Electrotechnical University “LETI”, where he completed his Engineering degree in the Physics of Semiconductor Devices, followed by pioneering research activities on III-Nitride semiconductors conducted at Ioffe Physico-Technical Institute of fundamental research.
MANUEL STABENTHEINER
Infineon Technologies Austria AG
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Advanced Methodology and Understanding of GaN Device Reliability
Manuel Stabentheiner is a Senior Staff Engineer working at Infineon Technologies Austria AG. He holds a bachelor's degree in technical physics and a diploma degree in material science from TU Vienna, which he attained in 2018. Joining Infineon in 2015, he initially specialized in physical failure analysis techniques. His work on the off-state degradation of p-GaN transistors during his diploma thesis and his activities in the development of GaN-specific failure analysis methods and workflows soon established him as a key expert in Infineon’s GaN failure analysis community. In 2021, he transitioned to the GaN technology development team and pursued his Ph.D. at TU Vienna, which he completed successfully in 2024. Throughout his Ph.D. studies, he focused on the electrical impact of dislocations on lateral and quasi-vertical GaN diodes. In his role as a technology development engineer, Dr. Manuel Stabentheiner works on the progressive enhancement of GaN material understanding at Infineon. His responsibilities extend to the exploration of leakage and degradation mechanisms, as well as the involvement in the predevelopment phase of forthcoming GaN device generations.